Pii: S0022-328x(00)00210-2
نویسندگان
چکیده
NaBH4 does not reduce carboxylic acids, esters, amides and nitriles under ambient conditions. However, the reactivity of NaBH4 can be enhanced by the addition of certain additives. For example, addition of iodine to NaBH4 in THF provides H3B–THF that is useful for hydroborations and reductions of various functional groups. The aldehydes and ketones are reduced in a fast manner by the NaBH4 reagent. Even so, the selectivities realised in such reductions can be enhanced using NaBH4 along with another additive. In this article, various methods used for the enhancement of reactivity and selectivity of NaBH4 in organic synthesis are described. © 2000 Elsevier Science S.A. All rights reserved.
منابع مشابه
Pii: S0022-328x(00)00589-1
A calculational investigation using semiempirical methods of the molecular and electronic structures, along with the nonlinear optical responses, of a series of compounds in which icosahedral carborane polyhedra bridge charged aromatic donor and acceptor moieties, specifically tropyl (C7H7 ) and cyclopentadienyl (C5H5 ) groups, found that these molecules show exceptionally large calculated seco...
متن کاملPii: S0022-3697(00)00039-1
A method is presented for solving the Bloch equation for Morse potential, based on the application of Fourier transformation of the density matrix. The results obtained agree completely with the results obtained by other methods, however its advantage lies in its elegance and intuitivity of the approach. q 2000 Elsevier Science Ltd. All rights reserved.
متن کاملPii: S0022-4359(00)00046-4
This study examines whether there are differences in consumers’ shopping behavior and product prices in grocery stores due to cultural orientation. The study uses a field setting in Southern California, comparing samples of American and Chinese culture on two occasions, each five years apart. Theory suggests that price sensitivity and the importance of the status of buyers differ substantially ...
متن کاملPii: S0022-3697(00)00068-8
The effects of lattice relaxation on the deep levels due to substitutional impurities in semiconductors are investigated using an extension of a previously developed formalism. Both ®rstand second-neighbor relaxation are included in the formalism. Using this method, deep level chemical trends and their trends with varying amounts of lattice relaxation are explored. For speci®c impurities, molec...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
دوره شماره
صفحات -
تاریخ انتشار 2000